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| 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0752-0200 (Previous ADE-208-1414) Rev.2.00 Aug.10.2005 Features * High gain bandwidth product fT = 8 GHz typ. * High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "ZS-". *MFPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 50 80 150 -55 to +150 Unit V V V mA mW C C Rev.2.00 Aug 10, 2005 page 1 of 14 2SC5702 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 15 80 6.5 11 Typ 18.5 120 0.85 8.0 13 1.05 Max 1 1 10 160 1.2 1.9 Unit V A mA mA pF GHz dB dB Test Conditions IC = 10 A, IE = 0 VCB = 10 V, IE = 0 VCE = 4 V, RBE = VEB = 1.5V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0 f = 1 MHz VCE = 1 V, IC = 5 mA f = 1 MHz VCE = 1 V, IC = 5 mA f = 900 MHz VCE = 1 V, IC = 5 mA f = 900 MHz Rev.2.00 Aug 10, 2005 page 2 of 14 2SC5702 Main Characteristics Maximum Collector Dissipation Curve 160 50 Collector Power Dissipation Pc (mW) Collecter Voltage vs. Collecter to Emitter Voltege 460 A 410 A 360 A 310 A Collecter Voltege Ic (mA) 120 40 260 A 30 210 A 160 A 80 20 110 A 40 10 60 A IB =10 A 0 50 100 150 200 0 1 2 3 4 5 Ambient Temperature Ta (C) Collecter to Emitter Voltege VCE (V) DC Current Transfet Ratio vs. Collector Current 200 Collecter Voltage vs. Base to Emitter Voltege Collecter Voltege Ic (mA) hFE DC Current Transfer Ratio 160 120 80 40 0 50 VCE = 1 V 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1 2 5 10 20 50 100 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage Reverse Transfer capacitance vs. Collector To Base Voltage (pF) 1.4 (pF) Reverse Transfer Capacitance Cre 1 VCB Cob IE = 0 f = 1 MHz 1.0 E: Guard pin f = 1 MHz 0.8 1.2 Collector Output Capacitance 1.0 0.6 0.8 0.4 0.6 0.4 0.2 0 0 10 (V) 0 1 Collector to Base Voltage 10 VCB (V) Collector to Base Voltage Rev.2.00 Aug 10, 2005 page 3 of 14 2SC5702 Collector Input Capacitance vs. Emitter To Base Voltage 1.0 f = 1 MHz 20 f = 900 MHz 16 VCE = 3 V 2V 12 Power Gain vs. Collector Current (pF) 0.8 Input Capacitance Cib 0.6 0.4 Power Gain PG (dB) 8 1V 4 0.2 0 0.1 0 1 10 1 2 5 10 20 50 100 Emitter to Base Voltage VEB (V) Collector Current IC (mA) Noise Figure vs. Collector Current 5.0 f = 900 MHz Gain Bandwidth Product vs. Collector Currnet fT (GHz) 20 VCE = 1 V f = 1 GHz 16 NF (dB) 4.0 3.0 2.0 1.0 0.0 1 VCE = 3 V 2V 1V Gain Bandwidth Prodfuct 12 Noise Figure 8 4 0 1 2 5 10 20 50 100 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) S21 Parameter vs. Collector Current 20 |S21|2 (dB) VCE = 1 V f = 1 GHz 16 12 S21 Parameter 8 4 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 14 2SC5702 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1 -1.5 -2 180 150 1 1.5 2 S21 Paramter vs. Frequency 90 120 Scale: 10 / div. 60 30 0 -150 -30 -120 -60 -90 Condition : V CE = 1 V, Zo = 50 100 to 2000 MHz (100 MHz STEP) (IC = 5mA) (IC = 20mA) Condition : V CE = 1 V, Zo = 50 100 to 2000 MHz (100 MHz STEP) (IC = 5mA) (IC = 20mA) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 10 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -60 -90 -.6 -.8 -1 -1.5 -2 -5 -4 -3 Condition : V CE = 1 V, Zo = 50 100 to 2000 MHz (100 MHz STEP) (IC = 5mA) (IC = 20mA) Condition : V CE = 1 V, Zo = 50 100 to 2000 MHz (100 MHz STEP) (IC = 5mA) (IC = 20mA) Rev.2.00 Aug 10, 2005 page 5 of 14 2SC5702 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1 -1.5 -2 -120 -90 180 0 150 30 1 1.5 2 S21 Paramter vs. Frequency 90 120 Scale: 10 / div. 60 -150 -30 -60 Condition : V CE = 2 V, Zo = 50 100 to 2000 MHz (100 MHz STEP) (IC = 5mA) (IC = 20mA) Condition : V CE = 2 V, Zo = 50 100 to 2000 MHz (100 MHz STEP) (IC = 5mA) (IC = 20mA) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 10 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -60 -90 -.6 -.8 -1 -1.5 -2 -5 -4 -3 Condition : V CE = 2 V, Zo = 50 100 to 2000 MHz (100 MHz STEP) (IC = 5mA) (IC = 20mA) Condition : V CE = 2 V, Zo = 50 100 to 2000 MHz (100 MHz STEP) (IC = 5mA) (IC = 20mA) Rev.2.00 Aug 10, 2005 page 6 of 14 2SC5702 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 150 30 S21 Paramter vs. Frequency 90 1 Scale: 10 / div. 60 1.5 2 120 3 45 10 180 0 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1 -1.5 -2 -120 -150 -30 -60 -90 Condition : V CE = 3 V, Zo = 50 100 to 2000 MHz (100 MHz STEP) (IC = 5mA) (IC = 20mA) Condition : V CE = 3 V, Zo = 50 100 to 2000 MHz (100 MHz STEP) (IC = 5mA) (IC = 20mA) S12 Parameter vs. Frequency 90 120 S21 Paramter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 10 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -120 -2 -.6 -.8 -1 -1.5 -150 -30 -60 -90 Condition : V CE = 3 V, Zo = 50 100 to 2000 MHz (100 MHz STEP) (IC = 5mA) (IC = 20mA) Condition : V CE = 3 V, Zo = 50 100 to 2000 MHz (100 MHz STEP) (IC = 5mA) (IC = 20mA) Rev.2.00 Aug 10, 2005 page 7 of 14 2SC5702 Sparameter (VCE = 1V, IC = 5mA, Zo = 50) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.832 0.723 0.636 0.559 0.513 0.473 0.462 0.443 0.432 0.435 0.420 0.438 0.428 0.442 0.444 0.448 0.464 0.460 0.474 0.481 ANG -28.2 -55.3 -78.0 -95.2 -110.1 -121.4 -132.4 -139.7 -148.1 -153.9 -160.5 -165.4 -168.8 -175.3 -177.1 177.3 176.0 172.7 170.1 168.3 MAG 14.18 12.19 10.17 8.43 7.15 6.15 5.40 4.84 4.32 3.94 3.60 3.33 3.11 2.87 2.75 2.57 2.44 2.34 2.21 2.13 S21 ANG 159.9 141.4 127.5 117.9 110.6 105.0 100.2 96.4 92.6 89.6 87.2 84.5 82.2 80.0 78.0 76.1 73.9 72.7 70.7 69.1 MAG 0.0347 0.0624 0.0806 0.0920 0.1001 0.1065 0.1124 0.1182 0.1236 0.1294 0.1351 0.1410 0.1471 0.1537 0.1601 0.1671 0.1739 0.1810 0.1888 0.1952 S12 ANG 74.2 61.4 52.8 48.9 46.8 45.8 46.0 46.7 47.6 48.7 49.5 50.9 51.9 53.2 54.3 55.2 56.2 56.9 57.8 58.6 MAG 0.927 0.789 0.644 0.532 0.447 0.378 0.327 0.285 0.250 0.223 0.200 0.181 0.163 0.151 0.138 0.130 0.124 0.119 0.116 0.114 S22 ANG -20.7 -38.8 -52.3 -61.8 -69.1 -75.3 -79.8 -84.6 -89.4 -93.3 -97.4 -102.3 -107.4 -111.4 -117.3 -121.8 -128.5 -135.6 -142.0 -148.5 Rev.2.00 Aug 10, 2005 page 8 of 14 2SC5702 Sparameter (VCE = 1V, IC = 20mA, Zo = 50) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.534 0.467 0.451 0.434 0.438 0.430 0.441 0.442 0.451 0.456 0.452 0.470 0.462 0.485 0.483 0.494 0.505 0.503 0.525 0.523 ANG -68.4 -111.9 -135.2 -149.5 -159.1 -165.9 -172.5 -175.8 178.4 175.8 171.2 169.0 166.2 162.5 162.0 158.4 157.3 155.6 152.6 152.4 MAG 30.97 20.56 14.57 11.16 9.02 7.58 6.52 5.75 5.09 4.62 4.22 3.87 3.62 3.34 3.16 2.98 2.81 2.69 2.54 2.45 S21 ANG 140.9 119.2 107.9 101.6 97.1 93.7 90.8 88.3 86.1 84.0 82.5 80.5 79.0 77.7 75.6 74.5 72.8 72.0 70.5 69.0 MAG 0.0258 0.0390 0.0490 0.0581 0.0673 0.0772 0.0872 0.0974 0.1081 0.1184 0.1291 0.1395 0.1504 0.1608 0.1719 0.1826 0.1935 0.2040 0.2148 0.2247 S12 ANG 65.2 57.4 58.2 60.5 63.1 65.0 66.5 67.7 68.5 69.5 69.7 70.2 70.2 70.7 70.7 70.6 70.5 70.4 70.5 70.2 MAG 0.735 0.489 0.350 0.276 0.231 0.201 0.182 0.170 0.164 0.158 0.157 0.158 0.158 0.162 0.164 0.168 0.175 0.181 0.189 0.195 S22 ANG -45.4 -73.4 -91.3 -104.5 -115.5 -125.9 -135.2 -144.0 -152.6 -160.2 -166.8 -173.0 -179.2 176.1 171.1 167.2 164.0 160.4 157.1 154.1 Rev.2.00 Aug 10, 2005 page 9 of 14 2SC5702 Sparameter (VCE = 2V, IC = 5mA, Zo = 50) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.837 0.739 0.646 0.565 0.513 0.466 0.444 0.429 0.412 0.411 0.395 0.410 0.401 0.413 0.417 0.415 0.431 0.426 0.447 0.450 ANG -25.5 -50.1 -72.1 -88.6 -103.4 -114.0 -125.7 -133.3 -142.2 -148.8 -155.5 -161.6 -165.3 -172.1 -174.3 -179.2 177.8 175.2 171.4 169.9 MAG 14.31 12.50 10.58 8.85 7.58 6.56 5.77 5.17 4.62 4.22 3.87 3.57 3.34 3.08 2.94 2.75 2.63 2.50 2.38 2.28 S21 ANG 161.2 143.5 129.9 120.2 112.7 106.9 102.1 98.1 94.1 91.1 88.6 85.7 83.6 81.4 79.1 77.4 75.0 73.8 71.8 70.1 MAG 0.0306 0.0559 0.0736 0.0848 0.0928 0.0996 0.1055 0.1106 0.1162 0.1214 0.1276 0.1331 0.1387 0.1447 0.1510 0.1579 0.1644 0.1709 0.1781 0.1850 S12 ANG 75.8 63.3 55.0 51.0 48.7 47.7 48.0 48.5 49.2 50.0 51.2 52.3 53.4 54.6 55.8 56.4 57.6 58.4 59.6 60.2 MAG 0.938 0.813 0.674 0.563 0.476 0.405 0.351 0.307 0.269 0.239 0.215 0.192 0.171 0.156 0.139 0.128 0.117 0.106 0.097 0.090 S22 ANG -18.2 -34.5 -46.5 -54.9 -61.1 -66.1 -69.5 -72.7 -76.1 -78.3 -80.7 -84.0 -86.6 -88.9 -92.9 -95.6 -100.4 -105.7 -112.2 -118.3 Rev.2.00 Aug 10, 2005 page 10 of 14 2SC5702 Sparameter (VCE = 2V, IC = 20mA, Zo = 50) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.548 0.451 0.415 0.390 0.392 0.382 0.387 0.387 0.390 0.399 0.400 0.412 0.409 0.433 0.426 0.435 0.454 0.446 0.475 0.473 ANG -58.6 -99.9 -125.6 -141.4 -152.5 -160.9 -168.1 -172.8 -178.6 178.2 172.6 170.4 167.8 163.6 162.4 158.8 157.9 155.5 153.5 152.7 MAG 32.28 22.20 15.97 12.32 9.97 8.41 7.23 6.39 5.66 5.13 4.69 4.29 4.01 3.70 3.50 3.30 3.10 2.97 2.81 2.71 S21 ANG 143.9 121.9 110.2 103.5 98.7 95.2 92.0 89.5 87.1 85.0 83.4 81.5 79.9 78.6 76.8 75.4 73.6 72.7 71.1 69.9 MAG 0.0231 0.0363 0.0464 0.0545 0.0632 0.0726 0.0823 0.0914 0.1019 0.1114 0.1213 0.1309 0.1411 0.1518 0.1615 0.1714 0.1817 0.1918 0.2021 0.2113 S12 ANG 67.8 59.6 60.1 61.7 63.8 65.6 67.1 68.5 69.2 70.2 70.6 71.1 71.1 71.6 71.4 71.5 71.8 71.2 71.3 71.1 MAG 0.777 0.527 0.373 0.283 0.226 0.184 0.155 0.133 0.117 0.104 0.097 0.092 0.091 0.092 0.093 0.097 0.103 0.109 0.117 0.125 S22 ANG -38.8 -62.6 -76.9 -86.7 -95.1 -102.9 -110.3 -118.3 -127.6 -136.9 -146.4 -156.2 -166.0 -174.7 176.8 170.5 165.0 159.1 155.2 150.3 Rev.2.00 Aug 10, 2005 page 11 of 14 2SC5702 Sparameter (VCE = 3V, IC = 5mA, Zo = 50) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.846 0.748 0.656 0.573 0.516 0.469 0.442 0.423 0.404 0.399 0.382 0.397 0.385 0.400 0.401 0.399 0.415 0.411 0.430 0.433 ANG -24.1 -48.1 -69.0 -84.9 -99.3 -110.6 -121.8 -130.4 -139.8 -146.0 -153.0 -159.3 -163.3 -169.7 -171.9 -177.2 179.5 176.8 173.0 171.4 MAG 14.25 12.56 10.71 9.03 7.75 6.72 5.92 5.31 4.75 4.34 3.97 3.69 3.44 3.18 3.03 2.84 2.70 2.57 2.44 2.35 S21 ANG 161.9 144.7 131.2 121.3 113.8 108.0 102.9 99.0 95.2 92.0 89.3 86.5 84.5 81.8 79.7 77.8 75.7 74.4 72.3 70.7 MAG 0.0287 0.0534 0.0705 0.0817 0.0895 0.0961 0.1015 0.1071 0.1128 0.1177 0.1230 0.1289 0.1344 0.1400 0.1462 0.1528 0.1590 0.1658 0.1727 0.1793 S12 ANG 75.9 64.3 56.4 52.0 49.6 48.6 48.5 49.0 49.9 50.7 51.7 53.2 54.2 55.1 56.2 57.4 58.2 59.0 60.1 61.0 MAG 0.9420 0.8245 0.6904 0.5802 0.4932 0.4224 0.3680 0.3229 0.2856 0.2535 0.2285 0.2052 0.1839 0.1680 0.1496 0.1381 0.1251 0.1122 0.1018 0.0914 S22 ANG -17.0 -32.2 -43.6 -51.5 -57.4 -61.6 -64.4 -67.1 -69.5 -71.2 -72.9 -74.8 -76.6 -78.0 -80.5 -82.1 -85.4 -89.0 -93.2 -97.8 Rev.2.00 Aug 10, 2005 page 12 of 14 2SC5702 Sparameter (VCE = 3V, IC = 20mA, Zo = 50) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.564 0.449 0.408 0.377 0.370 0.360 0.365 0.364 0.366 0.370 0.373 0.387 0.379 0.409 0.399 0.419 0.427 0.427 0.446 0.444 ANG -54.4 -94.6 -119.2 -136.7 -148.4 -157.6 -165.0 -170.4 -176.1 -179.9 174.6 172.5 168.0 164.7 163.4 159.1 159.5 156.2 154.6 153.5 MAG 32.56 22.76 16.50 12.76 10.36 8.71 7.52 6.64 5.87 5.33 4.87 4.47 4.16 3.85 3.64 3.43 3.24 3.09 2.93 2.80 S21 ANG 145.1 123.2 111.2 104.4 99.6 95.8 92.7 90.0 87.7 85.4 83.7 81.8 80.4 78.9 77.1 75.7 73.9 73.2 71.8 70.2 MAG 0.0221 0.0353 0.0448 0.0529 0.0618 0.0707 0.0801 0.0890 0.0991 0.1081 0.1178 0.1274 0.1375 0.1473 0.1568 0.1667 0.1765 0.1862 0.1963 0.2057 S12 ANG 69.2 60.3 60.4 62.0 64.1 65.9 67.5 68.4 69.6 70.1 70.6 71.1 71.4 71.7 71.6 71.8 71.8 71.3 71.7 71.4 MAG 0.7913 0.5457 0.3871 0.2929 0.2311 0.1861 0.1524 0.1274 0.1061 0.0893 0.0768 0.0685 0.0630 0.0603 0.0596 0.0631 0.0681 0.0757 0.0829 0.0914 S22 ANG -35.9 -58.3 -71.0 -78.9 -85.4 -91.3 -96.6 -102.7 -110.4 -117.9 -126.7 -138.6 -150.7 -162.8 -175.0 174.3 166.3 157.4 152.5 146.9 Rev.2.00 Aug 10, 2005 page 13 of 14 2SC5702 Package Dimensions JEITA Package Code SC-89 Modified RENESAS Code PUSF0003ZA-A Package Name MFPAK / MFPAKV MASS[Typ.] 0.0016g D e A c LP E HE L A A b xM S A Reference Symbol Dimension in Millimeters e A2 A e1 A1 b b1 c b2 A-A Section Pattern of terminal position areas c1 S I1 A A1 A2 b b1 c c1 D E e HE L LP x b2 e1 I1 Min 0.55 0 0.55 0.15 0.1 1.35 0.7 1.15 0.1 0.15 Nom 0.22 0.2 0.13 0.11 1.4 0.8 0.45 1.2 0.2 Max 0.6 0.01 0.59 0.3 0.15 1.45 0.9 1.25 0.3 0.45 0.05 0.35 0.5 0.75 Ordering Information Part Name 2SC5702ZS-TL-E Quantity 9000 Shipping Container 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 14 of 14 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
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